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Preliminary SIM100D12SV1 VCES = 1200V Ic = 100A VCE(ON) typ. = 1.7V @ Ic = 100A "HALF-BRIDGE" IGBT Features rench gate + field stopper, using Infineon chip design 10s Short circuit capability Low turn-off losses Short tail current for over 18KHz Positive VCE(on) temperature coefficient Applications AC & DC Motor controls VVVF inverters Optimized for high frequency inverter Type Welding machines High frequency SMPS UPS, Robotics Package : V1 Absolute Maximum Ratings @ Tc = 25 Symbol VCES VGES IC ICM IF IFM TSC Viso Tj Tstg Weight Mounting Torque (per leg) Condition VGE = 0V, Parameter Collector-to-Emitter Voltage Gate emitter voltage Continuous Collector Current Pulsed collector current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Isolation Voltage test Junction Temperature Storage Temperature Weight of Module Power Terminal Screw : M5 Terminal connection Screw : M5 TC = 80 TC = 25 TC = 80 TC= Ratings 1200 20 100(140) 200 100(140) 200 10 Unit V V A A A A IC = 500A s V AC 1 minute 2500 -40 ~ 150 -40 ~ 125 190 3.5 3.5 g Nm Nm Preliminary Electrical Characteristics @ Tj = 25 Symbol V(BR)CES VCE(ON) VGE(th) ICES IGES VFM SIM100D12SV1 Typ 1350 1.7 5.8 1.7 (unless otherwise specified) Min 1.4 4.0 1.4 Parameters Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Saturation Voltage Gate Threshold Voltage Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Diode Forward Voltage Drop Max 1374 2.1 6.5 500 100 Unit Test conditions VGE = 0V, IC = 200A V IC = 100A, VGE = 15V VCE = VGE, IC = 250A VCE = 1200V VGE = 20V A nA V VGE = 0V, VCE = 0V, IC = 100A 2.1 Switching Characteristic @ Tj = 25 Symbol Cies Coss Cres (unless otherwise specified) Min - Parameters Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Diode Peak Reverse Recovery current Diode Reverse Recovery time Typ 8653 452 395 342 45 624 108 155 100 Max - Unit Test conditions VCC = 25V, f = 1.0MHz VGE = 0V pF td(on) tr td(off) tf Irr trr Tj = 125 , VCC = 600V ns IC = 100A, RG = 3.9 VGE = 15V A ns Tj = 125 , VCC = 600V IF = 100A, RG = 3.9, di/dt=1200A/us Thermal Characteristic Values Symbol R R R Parameters Junction-to-Case (IGBT Part, Per 1/2 Module) Junction-to-Case (Diode Part, Per 1/2 Module) Case-to-Heat Sink (Conductive grease applied) Min - Typ 0.05 Max 0.20 0.41 - Unit Preliminary SIM100D12SV1 Fig 1. Maximum DC Collector Current vs. Case Temperature Fig 2. Power Dissipation vs. Case Temperature Fig 3. Typ. IGBT Output Characteristics TJ = 25 ; tp = 80s Fig 4. Typ. IGBT Output Characteristics TJ = 125 ; tp = 80s Preliminary SIM100D12SV1 Fig 5. Typ. Diode Forward Characteristics tp = 80s Fig 6. Typ. Transfer Characteristics VCE = 50V; tp = 10s Fig 7. Typical VCE vs. VGE TJ = 25 Fig 8. Typical VCE vs. VGE TJ = 125 Preliminary SIM100D12SV1 Fig 9. Typ. Capacitance vs. VCE VGE = 0V; f = 1Mhz Fig 10. Typical Gate Charge vs. VGE ICE = 60A; L = 600H Fig 11. Typ. Switching Time vs. IC TJ = 125 ; L = 200H; VCE = 600V RG = 3.9; VGE = 15V Fig 12. Typ. Switching Time vs. RG TJ = 125 ; L = 200H; VCE = 600V ICE = 100A; VGE = 15V Preliminary SIM100D12SV1 Fig 13. Normalized Transient Thermal Impedance, Juncion-to-Case (IGBT) Fig 14. Normalized Transient Thermal Impedance, Juncion-to-Case (DIODE) Preliminary Package Outline (dimensions in mm) SIM100D12SV1 OCT., 2008 Headquarter: #602, B/D, 402 BLD, BLK4, Techno-park, Wonmi-Gu, Bucheon-City, S.KOREA Tel)+82-32-234-4781, Fax)+82-32-234-4789 Sales & Marketing Marketing: clzhang@semiwell.com Sales: sales@semiwell.com WEB-site: WWW. Semiwell.com |
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